Hydrogen Sensing via Heterolytic H2 Activation at Room Temperature by Atomic Layer Deposited Ceria

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F25%3A10510790" target="_blank" >RIV/00216208:11320/25:10510790 - isvavai.cz</a>

Result on the web

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=yLXGQCyVfS" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=yLXGQCyVfS</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/cssc.202402342" target="_blank" >10.1002/cssc.202402342</a>

Result language

angličtina

Original language name

Hydrogen Sensing via Heterolytic H2 Activation at Room Temperature by Atomic Layer Deposited Ceria

Original language description

Ultrathin atomic layer deposited ceria films (&lt;20 nm) are capable of H-2 heterolytic activation at room temperature, undergoing a significant reduction regardless of the absolute pressure, as measured under in-situ conditions by near ambient pressure X-ray photoelectron spectroscopy. ALD-ceria can gradually reduce as a function of H-2 concentration under H-2/O-2 environments, especially for diluted mixtures below 10 %. At room temperature, this reduction is limited to the surface region, where the hydroxylation of the ceria surface induces a charge transfer towards the ceria matrix, reducing Ce4+ cations to Ce3+. Thus, ALD-ceria replicates the expected sensing mechanism of metal oxides at low temperatures without using any noble metal decorating the oxide surface to enhance H-2 dissociation. The intrinsic defects of the ALD deposit seem to play a crucial role since the post-annealing process capable of healing these defects leads to decreased film reactivity. The sensing behavior was successfully demonstrated in sensor test structures by resistance changes towards low concentrations of H-2 at low operating temperatures without using noble metals. These promising results call for combining ALD-ceria with more conductive metal oxides, taking advantage of the charge transfer at the interface and thus modifying the depletion layer formed at the heterojunction.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10305 - Fluids and plasma physics (including surface physics)

Project

—

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

ChemSusChem

ISSN

1864-5631

e-ISSN

1864-564X

Volume of the periodical

18

Issue of the periodical within the volume

13

Country of publishing house

DE - GERMANY

Number of pages

13

Pages from-to

e202402342

UT code for WoS article

001413628800001

EID of the result in the Scopus database

2-s2.0-85217570608