Homogenization of CZ Si wafers by Tabula Rasa annealing
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F09%3A00029728" target="_blank" >RIV/00216224:14310/09:00029728 - isvavai.cz</a>
Alternative codes found
RIV/68081723:_____/09:00332842
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Homogenization of CZ Si wafers by Tabula Rasa annealing
Original language description
The differences in oxygen precipitation, precipitate morphology and evolution of point defects in samples with and without Tabula Rasa applied were studied by experimental techniques such us infrared absorption spectroscopy, transmission electron microscopy, etching techniques and x-ray diffraction.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA202%2F09%2F1013" target="_blank" >GA202/09/1013: Nucleation and growth of oxygen precipitates in silicon</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica B condensed matter
ISSN
0921-4526
e-ISSN
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Volume of the periodical
404
Issue of the periodical within the volume
23-24
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
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UT code for WoS article
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EID of the result in the Scopus database
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