Study of oxygen precipitates in silicon using x-ray diffraction techniques
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F08%3A00027768" target="_blank" >RIV/00216224:14310/08:00027768 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Study of oxygen precipitates in silicon using x-ray diffraction techniques
Original language description
We have used two different x-ray diffraction techniques to characterize oxygen precipitates in Czochralski grown silicon. The first one is a reciprocal space mapping in the Bragg diffraction, which is used to determine the deformation field around the precipitates. The other on was simultaneous measurement of diffracted and transmitted beam in the Laue diffraction. This method gave us also concentration of oxygen precipitates.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů