Oxygen Precipitation in CZ Si Wafers after High Temperature Pre-annealing
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F10%3A00046555" target="_blank" >RIV/00216224:14310/10:00046555 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Oxygen Precipitation in CZ Si Wafers after High Temperature Pre-annealing
Original language description
In this work we study two stage and three stage annealing processes with application of Tabula rasa. The evolution of precipitates at various phases during annealing process for various temperatures was obtained from series of experimental techniques.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA202%2F09%2F1013" target="_blank" >GA202/09/1013: Nucleation and growth of oxygen precipitates in silicon</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů