Oxygen Precipitation in CZ Si Wafers after High Temperature
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F10%3A00421395" target="_blank" >RIV/68081723:_____/10:00421395 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Oxygen Precipitation in CZ Si Wafers after High Temperature
Original language description
In this work we study two stage and three stage annealing processes with application of Tabula rasa. The evolution of precipitates at various phases during annealing process for various temperatures was obtained from series of experimental techniques.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
SILICON 2010. 12th Scientific and Business Conference
ISBN
978-80-254-7361-0
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
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Publisher name
TECON Scientific, s.r.o.
Place of publication
Rožnov pod Radhoštěm
Event location
Rožnov pod Radhoštěm
Event date
Nov 2, 2010
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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