Infrared Absorption Spectroscopy of Defects in Floating Zone Silicon

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F10%3A00047310" target="_blank" >RIV/00216224:14310/10:00047310 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Infrared Absorption Spectroscopy of Defects in Floating Zone Silicon
Original language description
The infrared absorption method was used to study interstitial oxygen and substitutional carbon in floating zone silicon samples. Transmittance spectra have been measured in the temperature range from 10 to 300 K. This allowed us to determine low concentrations of interstitial oxygen and substitutional carbon in these samples. In the data analysis, we focused on isotopic splitting of the interstitial oxygen absorption band. The low temperature absorption spectra have been analysed using Lorentz oscillators and thus we were able to determine the abundances of the silicon isotopes in our samples.
Czech name
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Czech description
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Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
8th Interantional Conference NDT 2010 - Non-Destructive Testing in Engineering Practice (id 18982)
ISBN
978-80-7204-723-9
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
CERM
Place of publication
Brno
Event location
Brno, Czech Republic
Event date
Dec 1, 2010
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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