Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F11%3A00049737" target="_blank" >RIV/00216224:14310/11:00049737 - isvavai.cz</a>
Result on the web
<a href="http://prb.aps.org/abstract/PRB/v83/i12/e121302" target="_blank" >http://prb.aps.org/abstract/PRB/v83/i12/e121302</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.83.121302" target="_blank" >10.1103/PhysRevB.83.121302</a>
Alternative languages
Result language
angličtina
Original language name
Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots
Original language description
We study the effect of elastic anisotropic biaxial strain, induced by a piezoelectric actuator, on the light emitted by neutral excitons confined in different kinds of epitaxial quantum dots. We find that the light polarization rotates by up to similar to 80 degrees and the fine structure splitting (FSS) varies nonmonotonically by several tens of mu eV as the strain is varied. These findings provide the experimental proof of a recently predicted strain-induced anticrossing of the bright states of neutral excitons in quantum dots. Calculations on model dots qualitatively reproduce the observations and suggest that the minimum reachable FSS critically depends on the orientation of the strain axis relative to the dot elongation.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA202%2F09%2F0676" target="_blank" >GA202/09/0676: Impact of capping layers on electronic states in quantum dots</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review B
ISSN
1098-0121
e-ISSN
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Volume of the periodical
83
Issue of the periodical within the volume
12
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
"nestrankovano"
UT code for WoS article
000288160300001
EID of the result in the Scopus database
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