Study of amorphous thin films of Ge-As-Se system using laser desorption ionisation time-of-flight mass spectrometry

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F14%3A00073526" target="_blank" >RIV/00216224:14310/14:00073526 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

čeština

Original language name

Study of amorphous thin films of Ge-As-Se system using laser desorption ionisation time-of-flight mass spectrometry

Original language description

Chalcogenide amorphous thin films represent one of the important materials with extensive applications. High refractive indices, good transparency in the IR spectral region, and photoinduced changes of the optical properties can be achieved and used forintegrated optical devices, fully optical signal processing, optical circuits and, eventually for optical computing. The Ge-As-Se system belongs to group of glasses with large glass-forming region as well as tuning their photosensitivity/photostability.Laser desorption ionization (LDI) time-of-flight mass spectrometry (TOF MS) was proved to be highly useful for solid materials analysis, cf. for example. LDI TOF MS was applied here to analyze manufactured Ge-As-Se amorphous thin films fabricated by pulsed laser deposition technique. Mass spectra of the films are quite complex with severe clusters overlap. Stoichiometry of the GemAsnSeo clusters was determined via analysis of isotopic envelopes and computer modeling.

Czech name

Study of amorphous thin films of Ge-As-Se system using laser desorption ionisation time-of-flight mass spectrometry

Czech description

Chalcogenide amorphous thin films represent one of the important materials with extensive applications. High refractive indices, good transparency in the IR spectral region, and photoinduced changes of the optical properties can be achieved and used forintegrated optical devices, fully optical signal processing, optical circuits and, eventually for optical computing. The Ge-As-Se system belongs to group of glasses with large glass-forming region as well as tuning their photosensitivity/photostability.Laser desorption ionization (LDI) time-of-flight mass spectrometry (TOF MS) was proved to be highly useful for solid materials analysis, cf. for example. LDI TOF MS was applied here to analyze manufactured Ge-As-Se amorphous thin films fabricated by pulsed laser deposition technique. Mass spectra of the films are quite complex with severe clusters overlap. Stoichiometry of the GemAsnSeo clusters was determined via analysis of isotopic envelopes and computer modeling.

Type

O - Miscellaneous

CEP classification

CB - Analytical chemistry, separation

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů