Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F17%3A00096311" target="_blank" >RIV/00216224:14310/17:00096311 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1002/adma.201604185" target="_blank" >http://dx.doi.org/10.1002/adma.201604185</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/adma.201604185" target="_blank" >10.1002/adma.201604185</a>

Result language

angličtina

Original language name

Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk

Original language description

The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

ADVANCED MATERIALS

ISSN

0935-9648

e-ISSN

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Volume of the periodical

29

Issue of the periodical within the volume

3

Country of publishing house

DE - GERMANY

Number of pages

9

Pages from-to

„1604185-1“-„1604185-9“

UT code for WoS article

000392729800018

EID of the result in the Scopus database

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