Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F17%3A00096512" target="_blank" >RIV/00216224:14310/17:00096512 - isvavai.cz</a>
Result on the web
<a href="http://www.sciencedirect.com/science/article/pii/S0927024817300958" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0927024817300958</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.solmat.2017.02.033" target="_blank" >10.1016/j.solmat.2017.02.033</a>
Alternative languages
Result language
angličtina
Original language name
Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers
Original language description
The thermal stability of copper substrate material used in solar thermal collectors was investigated with and without atomic layer deposited (ALD) hafnium oxide barrier films at temperatures of 200–400 °C. HfO2 films were studied as barriers against thermal diffusion of copper substrate atoms. The ALD HfO2 thin films were deposited in a thermal process at 200 °C using Tetrakis(Dimethylamido)Hafnium(Hf(NMe2)4) and H2O precursors, with 200, 400, and 600 cycles. The Cu substrates with and without HfO2 thin films were aged by means of heat treatment in air. The influence of the HfO2 barriers was determined by optical, microstructural, and morphological analyses before and after the ageing procedures. The optical performance of the HfO2 barriers as a part of solar absorber stack was modelled with CODE Coating Designer. The copper surface without a HfO2 barrier thin film oxidized significantly, which increased thermal emittance and surface roughness. 200 cycles of HfO2 deposition did not result in a completely continuous coating and only provided a little protection against oxidation. Films of 200 and 400 cycles gave continuous coverage and the thickest HfO2 thin film studied, which was deposited from 600 ALD cycles and had a thickness ~50 nm, prevented Cu oxidation and diffusion processes after 2 h heat treatment in air at 300 °C, and retained low thermal emissivity. At 400 °C, diffusion and formation of copper oxide hillocks were observed but the HfO2 thin film significantly retarded the degradation when compared to a Cu substrate without and with thinner barrier layers.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Solar Energy Materials and Solar Cells
ISSN
0927-0248
e-ISSN
1879-3398
Volume of the periodical
166
Issue of the periodical within the volume
July
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
7
Pages from-to
140-146
UT code for WoS article
000401208200018
EID of the result in the Scopus database
2-s2.0-85016025672