Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F23%3A39920332" target="_blank" >RIV/00216275:25310/23:39920332 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.apsusc.2023.156834" target="_blank" >https://doi.org/10.1016/j.apsusc.2023.156834</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2023.156834" target="_blank" >10.1016/j.apsusc.2023.156834</a>
Alternative languages
Result language
angličtina
Original language name
Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor
Original language description
In the present study, HfO2 thin films were fabricated via atomic layer deposition (ALD) using a novel heteroleptic metal organic precursor [tris (dimethylamino) dimethylaminoboratabenzene hafnium] [eta(6):eta(1)-(C5H5BNMe2)Hf (NMe2)(3); (BBHf)] along with O2 as the oxygen source at a range of growth temperatures (i.e., 150-350 degrees C). This novel precursor is a heteroleptic complex synthesized by the introduction of a boratabenzene ligand (BB) into the parent Hf metal sphere to achieve an enhanced thermal stability. In this system, O2 is used as a mild oxygen-containing reactant to replace the typically employed ozone (O3). Distinctive self-limiting deposition was established with a comparatively high growth per cycle value of 0.068 nm, and linear growth was observed as a function of the ALD cycle number. Thermal decomposition was not detected at or below 350 degrees C, thereby indicating the improved thermal stability compared to when frequently used Cp (cyclopentadienyl)-amide precursors are employed. Under the ALD deposition conditions employed herein (275 degrees C), a complete step coverage was achieved with a good conformality on high aspect ratio dual trenches [top and bottom widths = 40 and 15 nm, respectively, aspect ratio (AR) approximate to 6.3], and uniformity was obtained on the large planar substrate (15 cm diameter). Upon annealing at 700 degrees C, the as-grown film formed an amorphous structure with a slightly enhanced crystallinity, while annealing at 850 degrees C led to the generation of nanocrystalline HfO2 films with amorphous structures, as indicated by X-ray diffraction measurements. The as-grown films were determined to be slightly rich in oxygen compared to the stoichiometry of HfO2, although they also contained significant amounts of residual impurities, such as H, B, and C (similar to 6, 6, and 7 at.%, respectively), as confirmed by Rutherford back-scattering spectrometry and elastic recoil detection analyses. The impurity levels were further reduced by increasing the growth temperature and by subsequent post-annealing, as evidenced by X-ray photoelectron spectroscopy and secondary-ion mass spectrometry analyses. Finally, ellipsometry analysis was performed to measure the optical properties of the prepared ALD-HfO2 thin films. It is expected that the described process may be of significance in the preparation of high-k films wherein thermally stable amorphous films with extremely conformal and uniform coatings are required to fabricate next-generation electronic devices.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
1873-5584
Volume of the periodical
620
Issue of the periodical within the volume
May
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
15
Pages from-to
156834
UT code for WoS article
000949722300001
EID of the result in the Scopus database
2-s2.0-85149169290