New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F24%3A39921830" target="_blank" >RIV/00216275:25310/24:39921830 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/abs/pii/S2468023024001731?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S2468023024001731?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.surfin.2024.104014" target="_blank" >10.1016/j.surfin.2024.104014</a>
Alternative languages
Result language
angličtina
Original language name
New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition
Original language description
This study presents the deposition of zirconium oxide (ZrO2) thin films through atomic layer deposition (ALD) using a novel Zr precursor, tris(dimethylamido) dimethylamidoboratabenzene zirconium [eta(6):eta(1)-(C5H5BNMe2)Zr(IV)(NMe2)(3)] and O2 reactant on SiO2/Si substrate in a range of 150-350 degrees C. The successful growth of highly conformal and amorphous ZrO2 films was possible using O2 as a mild oxygen source, which has rarely been found in ZrO2 ALD. This newly proposed process displayed distinct ALD characteristics, including self-limiting film growth and a linear relationship between the number of ALD cycles and film thickness, and exhibited enhanced deposition temperature window and growth per cycle of 0.87 Ang;, which is higher than those using several previously reported Zr precursors. Extremely conformal film growth with complete step coverage on trenches [aspect ratio of similar to 6.3] and uniformity on a 15 cm large SiO2/Si wafer was realized, which is one of the main highlights. Structural studies reveal a predominant amorphous nature of the as-deposited films and transition into nanocrystalline cubic ZrO2 films annealed at 850 degrees C with improved film properties such as stoichiometry, reduced impurities, which is confirmed by Rutherford backscattering spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, elastic recoil detection, and secondary ion mass spectrometry analyses. The optical properties of the prepared films were also examined via ellipsometry analysis.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20500 - Materials engineering
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Surfaces and Interfaces
ISSN
2468-0230
e-ISSN
2468-0230
Volume of the periodical
46
Issue of the periodical within the volume
March 2024
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
14
Pages from-to
104014
UT code for WoS article
001183264500001
EID of the result in the Scopus database
2-s2.0-85185157789