Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F18%3A00106358" target="_blank" >RIV/00216224:14310/18:00106358 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.5026195" target="_blank" >http://dx.doi.org/10.1063/1.5026195</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.5026195" target="_blank" >10.1063/1.5026195</a>
Alternative languages
Result language
angličtina
Original language name
Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region
Original language description
Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for determination of their thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/LO1411" target="_blank" >LO1411: Development of Centre for low-cost plasma and nanotechnology surface modification</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
123
Issue of the periodical within the volume
18
Country of publishing house
US - UNITED STATES
Number of pages
11
Pages from-to
185707
UT code for WoS article
000432331100037
EID of the result in the Scopus database
2-s2.0-85047127115