The effect of rapid atmospheric plasma treatment of FTO substrates on the quality of TiO2 blocking layers for printed perovskite solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F21%3A00118955" target="_blank" >RIV/00216224:14310/21:00118955 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.mssp.2021.105850" target="_blank" >https://doi.org/10.1016/j.mssp.2021.105850</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mssp.2021.105850" target="_blank" >10.1016/j.mssp.2021.105850</a>
Alternative languages
Result language
angličtina
Original language name
The effect of rapid atmospheric plasma treatment of FTO substrates on the quality of TiO2 blocking layers for printed perovskite solar cells
Original language description
The aim of this work is to investigate and compare rapid ambient air atmospheric plasma treatment with time-consuming standard cleaning procedure for FTO substrates. Cleanliness has immediate and important effects on TiO2 blocking layers and subsequently on the photovoltaic performance of printed carbon-based perovskite solar cells (C–PSCs). The effects of the alternative approaches to FTO cleaning are characterized by XPS, Raman imaging spectroscopy, SEM, and optical microscopy. The C–PSCs treated with low-temperature atmospheric plasma for 10 s exhibited a similar conversion efficiency to that of cells prepared with FTO substrates cleaned by standard procedures (6% vs 6.1%). The results indicate that rapid plasma treatment of FTO substrates can be as effective as standard cleaning, which may employ various toxic organic solvents and time-consuming ultrasonic baths. The highest efficiency (6.3%) was achieved with C–PSCs for which the substrates had been cleaned by combined standard cleaning and 10-s plasma treatment. XPS and Raman measurements confirmed that both standard and plasma treatment significantly reduced organic residues and other contamination on FTO surfaces, enhancing the overall quality of TiO2 blocking layers and the performance of the whole solar device.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials Science in Semiconductor Processing
ISSN
1369-8001
e-ISSN
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Volume of the periodical
131
Issue of the periodical within the volume
August
Country of publishing house
GB - UNITED KINGDOM
Number of pages
8
Pages from-to
„105850“
UT code for WoS article
000663423300004
EID of the result in the Scopus database
2-s2.0-85105245911