WO3 thin films grown on Si substrates: potential high Tc ferromagnetic semiconductors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F24%3A00137582" target="_blank" >RIV/00216224:14310/24:00137582 - isvavai.cz</a>
Result on the web
<a href="https://link.springer.com/article/10.1007/s00339-024-08038-w" target="_blank" >https://link.springer.com/article/10.1007/s00339-024-08038-w</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s00339-024-08038-w" target="_blank" >10.1007/s00339-024-08038-w</a>

Result language
angličtina
Original language name
WO3 thin films grown on Si substrates: potential high Tc ferromagnetic semiconductors
Original language description
Well-defined ferromagnetism (FM) with a very high Tc of about 800 K was found in laser-ablated WO3 films grown on Si wafer substrates. It seems that the observed magnetism is surface related, and oxygen vacancies might play an important role in inducing FM into these oxide semiconductors. The very high Tc FM is observed for the first time in nanosized-WO3, indicating a great potential for spintronic applications.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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