X-ray diffraction and reflectance, raman scattering and photoluminiscence characterization of thermally annealed epitaxial Si 1-x Ge x layers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F93%3A00005849" target="_blank" >RIV/00216224:14310/93:00005849 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
X-ray diffraction and reflectance, raman scattering and photoluminiscence characterization of thermally annealed epitaxial Si 1-x Ge x layers
Original language description
X-ray diffraction and reflectance, raman scattering and photoluminiscence characterization of thermally annealed epitaxial Si 1-x Ge x layers
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
1993
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
—
Volume of the periodical
1993
Issue of the periodical within the volume
2
Country of publishing house
GB - UNITED KINGDOM
Number of pages
4
Pages from-to
158
UT code for WoS article
—
EID of the result in the Scopus database
—