Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F15%3A00085353" target="_blank" >RIV/00216224:14740/15:00085353 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/0268-1242/30/10/105001" target="_blank" >http://dx.doi.org/10.1088/0268-1242/30/10/105001</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/0268-1242/30/10/105001" target="_blank" >10.1088/0268-1242/30/10/105001</a>
Alternative languages
Result language
angličtina
Original language name
Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates
Original language description
In this work we address three-dimensional heterojunctions, demonstrating that photoluminescence from defect-free, Ge/SiGe multiple quantum well (MQW) micro-crystals grown on deeply patterned Si(001) and Si(111) substrates exhibit similar radiative intensity and analogous spectral shape.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Semiconductor Science and Technology
ISSN
0268-1242
e-ISSN
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Volume of the periodical
30
Issue of the periodical within the volume
10
Country of publishing house
GB - UNITED KINGDOM
Number of pages
9
Pages from-to
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UT code for WoS article
000362602300009
EID of the result in the Scopus database
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