Structure and optical properties of Ge-Se amorphous films prepared by pulsed laser deposition

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F04%3A00001527" target="_blank" >RIV/00216275:25310/04:00001527 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Structure and optical properties of Ge-Se amorphous films prepared by pulsed laser deposition
Original language description
Thin amorphous films of GexSe1-x system, where x = 0.22-0.28, were prepared by pulsed laser deposition technique. The photo- and thermally-induced changes of structure and optical gap (Egopt) of the layers were studied and discussed. The exposure and annealing causes bleaching of films, Egopt values are thus increasing. The structure is influenced only marginally by exposure as it results from Raman spectra, the annealing causes decrease of Raman bands amplitudes corresponding to Ge-Ge, Se-Se bonds andto structural units similar to (GeSe)n. This fact can be ascribed to chemical reactions between the fragments formed during pulsed laser deposition.
Czech name
Struktura a optické vlastnosti amorfních vrstev Ge-Se připravených pulsní laserovou depozicí
Czech description
Struktura a optické vlastnosti amorfních vrstev Ge-Se připravených pulsní laserovou depozicí

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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