Amorphous Ge-Se thin films prepared by pulsed laser deposition

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F04%3A00001530" target="_blank" >RIV/00216275:25310/04:00001530 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Amorphous Ge-Se thin films prepared by pulsed laser deposition
Original language description
Thin amorphous GexSe1-x, x = 0.22-0.28, films were prepared by pulsed laser deposition technique. The photo- and thermally-induced changes of structure and optical gap (Egopt ) of the films were studied and discussed. The exposure and annealing causes bleaching of films, the Egopt is increasing. The structure is influenced only a little by exposure, the annealing causes decrease of Raman bands amplitudes corresponding to Ge-Ge, Se-Se bonds and to structural units similar to (GeSe)n. This fact can be ascribed to chemical reactions between fragments formed during pulsed laser deposition.
Czech name
Amorfní tenké vrstvy Ge-Se připravené pulsní laserovou depozicí
Czech description
Amorfní tenké vrstvy Ge-Se připravené pulsní laserovou depozicí

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Project
<a href="/en/project/LN00A028" target="_blank" >LN00A028: New inorganic compounds and advanced materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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