Lattice defects in Cu doped Bi2Te3 single crystals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F07%3A00006554" target="_blank" >RIV/00216275:25310/07:00006554 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Lattice defects in Cu doped Bi2Te3 single crystals

Original language description

Relations between the concentration of free charge carriers and the concentration of Cu atoms were studied on Bi2Te3 single crystals doped by copper in a wide range of the copper concentration with the aim to contribute to the clarification of the existence of inactive Cu ions embedded in the lattice of a Bi2Te3 crystal. We compare the changes in the concentrations of free charge carriers due to Cu-doping from melt with that of induced by electrochemical intercalation of copper. Models of possible defect structures of the Bi2Te3 crystals with admixtures of Cu atoms were proposed both for doped and intercalated single crystals.

Czech name

Lattice defects in Cu doped Bi2Te3 single crystals

Czech description

Relations between the concentration of free charge carriers and the concentration of Cu atoms were studied on Bi2Te3 single crystals doped by copper in a wide range of the copper concentration with the aim to contribute to the clarification of the existence of inactive Cu ions embedded in the lattice of a Bi2Te3 crystal. We compare the changes in the concentrations of free charge carriers due to Cu-doping from melt with that of induced by electrochemical intercalation of copper. Models of possible defect structures of the Bi2Te3 crystals with admixtures of Cu atoms were proposed both for doped and intercalated single crystals.

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2007

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Ooptical and Magnetic Properties

ISSN

0141-8637

e-ISSN

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Volume of the periodical

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Issue of the periodical within the volume

87

Country of publishing house

GB - UNITED KINGDOM

Number of pages

11

Pages from-to

325-335

UT code for WoS article

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EID of the result in the Scopus database

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