Lattice defects in Cu doped Bi2Te3 single crystals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F07%3A00006554" target="_blank" >RIV/00216275:25310/07:00006554 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Lattice defects in Cu doped Bi2Te3 single crystals
Original language description
Relations between the concentration of free charge carriers and the concentration of Cu atoms were studied on Bi2Te3 single crystals doped by copper in a wide range of the copper concentration with the aim to contribute to the clarification of the existence of inactive Cu ions embedded in the lattice of a Bi2Te3 crystal. We compare the changes in the concentrations of free charge carriers due to Cu-doping from melt with that of induced by electrochemical intercalation of copper. Models of possible defect structures of the Bi2Te3 crystals with admixtures of Cu atoms were proposed both for doped and intercalated single crystals.
Czech name
Lattice defects in Cu doped Bi2Te3 single crystals
Czech description
Relations between the concentration of free charge carriers and the concentration of Cu atoms were studied on Bi2Te3 single crystals doped by copper in a wide range of the copper concentration with the aim to contribute to the clarification of the existence of inactive Cu ions embedded in the lattice of a Bi2Te3 crystal. We compare the changes in the concentrations of free charge carriers due to Cu-doping from melt with that of induced by electrochemical intercalation of copper. Models of possible defect structures of the Bi2Te3 crystals with admixtures of Cu atoms were proposed both for doped and intercalated single crystals.
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Ooptical and Magnetic Properties
ISSN
0141-8637
e-ISSN
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Volume of the periodical
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Issue of the periodical within the volume
87
Country of publishing house
GB - UNITED KINGDOM
Number of pages
11
Pages from-to
325-335
UT code for WoS article
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EID of the result in the Scopus database
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