Defect structure of Sb2-xCrxTe3 single crystals

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F08%3A00007766" target="_blank" >RIV/00216275:25310/08:00007766 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Defect structure of Sb2-xCrxTe3 single crystals
Original language description
Single crystals of Sb2Te3 doped with Cr (cCr= 0 ? 6 x1020cm-3) were prepared by the Bridgman method. The measurements of the Hall coefficient reveal a non-monotonous dependence of hole concentrations on the Cr content in the crystal. The hole concentration decreases at low content of Cr while at higher content of Cr increases again. However, according to magnetic measurements Cr atoms enter the structure and form uncharged substitutional defects , which can not affect the free carrier concentration directly. The observed dependence can be elucidated by means of a point defect model. The model is based on an assumption that defect structure of Sb2Te3 can be treated as hybrid Schottky and antisite defect disorder. Thus, we assume an interaction of with the most populated native defects in the structure - antisite defects and vacancies in the Te sublattice .
Czech name
Defektní struktura monokrystalů Sb2-xCrxTe3
Czech description
Monokrystaly Sb2-xCrxTe3 byly připraveny Bridgmanovou metodou. Změna koncentrace volných nositelů proudu byla diskutována v rámci modelu defektních stavů.

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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