Study of As50Se50 thin film photodarkening induced by multiple wavelength beams

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F11%3A39892203" target="_blank" >RIV/00216275:25310/11:39892203 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Study of As50Se50 thin film photodarkening induced by multiple wavelength beams

Original language description

This paper deals with study of photodarkening induced in chalcogenide glass thin films of composition As50Se50. The kinetics of photoinduced changes under the exposures to a band gap monochromatic beam of LED diode, as well as to beams with energy higherand lower than band gap value, were measured and discussed. Mathematical expression describing the time dependences of photodarkening was established. Related structural changes were studied using Raman spectroscopy as well.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BH - Optics, masers and lasers

OECD FORD branch

—

Project

<a href="/en/project/GAP204%2F11%2F0832" target="_blank" >GAP204/11/0832: Fabrication of optical elements based on micro- and nanostructuring of chalcogenide layers</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Optoelectronics and Advanced Materials

ISSN

1454-4164

e-ISSN

—

Volume of the periodical

13

Issue of the periodical within the volume

11

Country of publishing house

RO - ROMANIA

Number of pages

4

Pages from-to

1510-1513

UT code for WoS article

000298834200030

EID of the result in the Scopus database

—