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Optically-Induced diffusion and dissolution of Ag into thin films of (GeS2)0,8(Ga2S3)0,2

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F11%3A39894495" target="_blank" >RIV/00216275:25310/11:39894495 - isvavai.cz</a>

  • Alternative codes found

    RIV/61389013:_____/11:00370887

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Optically-Induced diffusion and dissolution of Ag into thin films of (GeS2)0,8(Ga2S3)0,2

  • Original language description

    Chalcogenide glasses containing Ag are seen as promising alternative materials for many applications, such as optical elements, memories, bio- and chemical-sensors, solid electrolytes and batteries. Thin films were prepared from bulk sample with composition (GeS(2))(0,8)(Ga(2)S(3))(0,2), which was obtained by direct synthesis from pure elements. Two methods were used for thin films preparation - thermal evaporation with two different boxes and pulsed laser deposition (PLD). Thin films were characterizedby XRD, EDX, UV/VIS spectroscopy and VASE. Thin films prepared by PLD were suitable thanks to good agreement of composition with bulk sample and good optical homogeneity for photoinduced diffusion and dissolution (OIDD) of silver. After OIDD process thethin films containing Ag were characterized by XRD, EDX, UV/VIS spectroscopy and VASE

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    CA - Inorganic chemistry

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2011

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Optoelectronics and Advanced Materials

  • ISSN

    1454-4164

  • e-ISSN

  • Volume of the periodical

    13

  • Issue of the periodical within the volume

    11

  • Country of publishing house

    RO - ROMANIA

  • Number of pages

    6

  • Pages from-to

    1553-1558

  • UT code for WoS article

    000298834200038

  • EID of the result in the Scopus database