Ge-Sb-Te thin films doped with antimony for rewritable phase-change memories
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F11%3A39895993" target="_blank" >RIV/00216275:25310/11:39895993 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Ge-Sb-Te thin films doped with antimony for rewritable phase-change memories
Original language description
The Ge-Sb-Te ternary chalcogenide system is a material for phase-change memories. However, the commercially available Ge2Sb2Te5 degrades during multiple rewriting cycles into Ge15Sb47Te38 [1]. Sb doped Ge2Sb2Te5 thin films were deposited by RF magnetronsputtering and were tested for their suitability as PRAMs using the van der Pauw method [2]. Amorphous and thermally treated thin films were characterized by the Scanning Electron Microscopy (surface morphology) coupled with the Energy Dispersive X-ray analysis (chemical composition and homogeneity) and by the X-ray diffraction analysis (crystallinity). The influence of Sb content, deposition conditions and thermal treatment on the composition, crystallinity and surface morphology of samples were established. A profile of temperature dependence of the sheet resistance and characteristic temperatures (e.g. the crystallization) were obtained and will be discussed.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/EE2.3.09.0104" target="_blank" >EE2.3.09.0104: Education and Development of Research Team for Centre of Material Science Pardubice</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů