Crystallization behavior of RF magnetron sputtered Ge2Sb2.3Te4Se thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39895998" target="_blank" >RIV/00216275:25310/12:39895998 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Crystallization behavior of RF magnetron sputtered Ge2Sb2.3Te4Se thin films
Original language description
Thin amorphous Ge-Sb-Te-Se films were deposited by RF (f = 13.56 MHz) magnetron sputtering of Ge2Sb2.3Te4Se target in argon plasma. Feasibility of prepared thin films for PC-RAM application was tested via four-point probe measurement of temperature dependence of sheet resistance known as Van der Pauw technique. As-deposited and thermally treated thin films were characterized by the same way. Composition, chemical homogeneity and surface morphology were studied by Energy Dispersive X-Ray analysis coupledwith Scanning Electron Microscopy (SEM-EDX) whilst crystallinity was determined by X-Ray diffraction (XRD). Moreover, optical properties of as-deposited thin films were determined due Variable Angle Spectroscopic Ellipsometry (VASE). Influence of deposition conditions or thermal treatment to composition, crystallinity and surface morphology were established. Profile of temperature dependence of sheet resistance and characteristic temperatures (e.g. crystallization temperature) were obta
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů