Thermoelectric Figure of Merit of Single Crystals p-(BixSb(1-x))2-ySnyTe3 in Wide Temperature Range

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39895454" target="_blank" >RIV/00216275:25310/12:39895454 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Thermoelectric Figure of Merit of Single Crystals p-(BixSb(1-x))2-ySnyTe3 in Wide Temperature Range
Original language description
Here we report the influence of tin doping on the thermoelectric properties of p-(BixSb(1-x))2-ySnyTe3 single crystals (x = 0; 0,25; 0,5) in the temperature range 7 K - 300 K. Studies of the temperature dependence of Seebeck coefficient S, electrical conductivity, heat conductivity k and figure of merit of p-(BixSb(1-x))2-ySnyTe3 single crystals were carried out. In order to determine the concentration of light holes and the Fermi energy, we used the Shubnikov-de-Haas effect at T = 4.2 K. By increasingthe Sn content, the hole concentration increases in p-(BixSb(1-x))2-ySnyTe3. The thermal conductivity k of the p-(BixSb(1-x))2-ySnyTe3 crystals decreases due to Sn doping, while electrical resistivity increases in the temperature interval 150 K less T less 300 K and decreases at T less 150 K. The Seebeck coefficient S for all compositions is positive and decreases due to Sn doping in the whole temperature range. The main reason for this is an acceptor effect and increase of the hole conc
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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