Low-temperature transport properties of Tl-doped Bi2Te3 single crystals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F13%3A39896438" target="_blank" >RIV/00216275:25310/13:39896438 - isvavai.cz</a>
Result on the web
<a href="http://prb.aps.org/abstract/PRB/v88/i4/e045202" target="_blank" >http://prb.aps.org/abstract/PRB/v88/i4/e045202</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.88.045202" target="_blank" >10.1103/PhysRevB.88.045202</a>
Alternative languages
Result language
angličtina
Original language name
Low-temperature transport properties of Tl-doped Bi2Te3 single crystals
Original language description
While the bulk, stoichiometric Bi2Te3 single crystals often exhibit p-type metallic electrical conduction due to the BiTe-type antisite defects, doping by thallium (Bi(2-x)Tl(x)Te3,x = 0-0.3) progressively changes the electrical conduction of single crystals from p type (0{=x{=0.08) to n type (0.12{=x{= 0.30). This is observed via measurements of both the Seebeck coefficient and the Hall effect performed in the crystallographic (0001) plane in the temperature range of 2-300 K. Since any kind of substitution of Tl on the Bi or Te sublattices would result in an enhancement of the density of holes rather than its decrease, and because simple incorporation of Tl at interstitial sites or in the van der Waals gap is unlikely as it would increase the latticeparameters which is not observed in experiments, incorporation of Tl likely proceeds via the formation of TlBiTe2 fragments coexisting with the quintuple layer structure of Bi2Te3. At low levels of Tl, 0{=x{= 0.05, the temperature-depende
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review B
ISSN
1098-0121
e-ISSN
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Volume of the periodical
88
Issue of the periodical within the volume
4
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
"045202-1"-"1-7"
UT code for WoS article
000321838800004
EID of the result in the Scopus database
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