The Power Factor of Bi(2-x)Tl(x)Se(3) Single Crystals

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F10%3A39881583" target="_blank" >RIV/00216275:25310/10:39881583 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
The Power Factor of Bi(2-x)Tl(x)Se(3) Single Crystals
Original language description
Single crystals of the ternary system Bi(2-x)Tl(x)Se(3) (nominaly x = 0.0-0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity, Hall coefficient RH(B||c) and Seebeck coefficient S. The measurements indicate that incorporation of Tl into Bi2Se3 lowers the concentration of free electrons and enhances their mobility. This effect is explained within the framework of the point defects in the crystal lattice, with formation of substitutional defects of thallium in place of bismuth (Tl(Bi)) and a decrease in the concentration of selenium vacancies (V(Se)2+). The temperature dependence of the power factor of the samples is also discussed. As a consequence of the thallium doping we observe a significant increase of the power factor compared to parental Bi2Se3.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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