Thermoelectric properties of Tl doped Bi2Se3 single crystals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F09%3A00008342" target="_blank" >RIV/00216275:25310/09:00008342 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Thermoelectric properties of Tl doped Bi2Se3 single crystals

Original language description

Single crystals of a ternary system based on Bi2-xTlxSe3 (nominaly x = 0.0-0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity, Hall coefficient, Seebeck coefficient. The measurements indicate that by incorporating Tl in Bi2Se3 one lowers the concentration of free electrons and enhances their mobility. This effect is explained in the frame of the point defects in the crystal lattice ? formation of substitutional defects thallium on the place of bismuth and decrease of concentration of selenium vacancies. We also discuss the temperature dependence of the power factor of the samples. Upon the thallium doping we observe a significant increase of the power factor compare to parental Bi2Se3.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Crystal Research and Technology

ISSN

0232-1300

e-ISSN

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Volume of the periodical

44

Issue of the periodical within the volume

5

Country of publishing house

DE - GERMANY

Number of pages

6

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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