Optical properties of Tl-doped Bi2Se3 single crystals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F10%3A39882164" target="_blank" >RIV/00216275:25310/10:39882164 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Optical properties of Tl-doped Bi2Se3 single crystals
Original language description
Bi(2-x)Tl(x)Se(3) single crystals with Tl content of cTl = 0 to 5.2*10^24 atoms/m3 prepared from the elements of 5N purity by means of a modified Bridgman method were characterized by the measurements of infrared reflectance and transmittance. It was found that the substitution of Tl atoms for Bi atoms in the Bi2Se3 crystal lattice leads to decrease in the free carrier concentration. This effect is explained within a model of the point defects in the crystal lattice.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Scientific Papers of the University of Pardubice, Series A, Faculty of Chemical Technology
ISSN
1211-5541
e-ISSN
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Volume of the periodical
16
Issue of the periodical within the volume
prosinec
Country of publishing house
CZ - CZECH REPUBLIC
Number of pages
11
Pages from-to
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UT code for WoS article
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EID of the result in the Scopus database
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