Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F16%3A39901470" target="_blank" >RIV/00216275:25310/16:39901470 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1038/srep26552" target="_blank" >http://dx.doi.org/10.1038/srep26552</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1038/srep26552" target="_blank" >10.1038/srep26552</a>
Alternative languages
Result language
angličtina
Original language name
Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films
Original language description
Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as similar to 0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JH - Ceramics, fire-proof materials and glass
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA15-02634S" target="_blank" >GA15-02634S: Amorphous chalcogenide thin films: photoinduced phenomena</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Scientific Reports
ISSN
2045-2322
e-ISSN
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Volume of the periodical
6
Issue of the periodical within the volume
May 2016
Country of publishing house
GB - UNITED KINGDOM
Number of pages
10
Pages from-to
"26552-1"-"26552-10"
UT code for WoS article
000376192500001
EID of the result in the Scopus database
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