Intramolecularly coordinated galium sulfides: Suitable single source precursors for GaS thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F16%3A39902116" target="_blank" >RIV/00216275:25310/16:39902116 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/chem.201604190" target="_blank" >http://dx.doi.org/10.1002/chem.201604190</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/chem.201604190" target="_blank" >10.1002/chem.201604190</a>

Result language
angličtina
Original language name
Intramolecularly coordinated galium sulfides: Suitable single source precursors for GaS thin films
Original language description
The studies have been focused on the synthesis of N -> Ga coordinated organogallium sulfides [(LGa)-Ga-1(mu-S)](3) (1) and [(LGa)-Ga-2(mu-S)](2) (2) containing either N,C,N- or C,N-chelating ligands L-1 or L-2 (L-1 is {2,6-(Me2NCH2)(2)C6H3}(-) and L-2 is {2-(Et2NCH2)-4,6-tBu(2)-C6H2}(-)). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N -> Ga coordinated or-ganogallium tetrasulfide (LGa)-Ga-1(kappa(2)-S-4) (3) was prepared and the unprecedented complex [{2-[CH{(CH2)(3)CH3}(mu-OH)]-6-CH2NMe2} C6H3] GaS (4) was also isolated as the minor by product of the reaction. Compounds 1-3 were further studied as potential single-source precursors for amorphous GaS thin film deposition by spin-coating.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Project
<a href="/en/project/GA15-07912S" target="_blank" >GA15-07912S: New 2D layered chalcogenides thin films and 3D nanostructures: Synthesis and characterization</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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