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Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22340%2F16%3A43902517" target="_blank" >RIV/60461373:22340/16:43902517 - isvavai.cz</a>

  • Result on the web

    <a href="http://onlinelibrary.wiley.com/doi/10.1002/chem.201604190/abstract;jsessionid=5763400065D0D73879217D80B528708F.f02t02" target="_blank" >http://onlinelibrary.wiley.com/doi/10.1002/chem.201604190/abstract;jsessionid=5763400065D0D73879217D80B528708F.f02t02</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1002/chem.201604190" target="_blank" >10.1002/chem.201604190</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films

  • Original language description

    Our studies have been focused on the synthesis of N-Ga coordinated organogallium sulfides [L1Ga(S)]3 (1) and [L2Ga(S)]2 (2) containing either N,C,N- or C,N-chelating ligands L1 or L2 (L1 is {2,6-(Me2NCH2)2C6H3} and L2 is {2-(Et2NCH2)-4,6-tBu2-C6H2}). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N?Ga coordinated organogallium tetrasulfide L1Ga(2-S4) (3) was prepared and the unprecedented complex [{2-[CH{(CH2)3CH3}(-OH)]-6-CH2NMe2}C6H3]GaS (4) was also isolated as the minor by-product of the reaction. Compounds 1-3 were further studied as potential single-source precursors for amorphous GaS thin film deposition by spin-coating.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10402 - Inorganic and nuclear chemistry

Result continuities

  • Project

    <a href="/en/project/GA15-07912S" target="_blank" >GA15-07912S: New 2D layered chalcogenides thin films and 3D nanostructures: Synthesis and characterization</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Chemistry A European Journal

  • ISSN

    0947-6539

  • e-ISSN

  • Volume of the periodical

    22

  • Issue of the periodical within the volume

    52

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    7

  • Pages from-to

    18817-18823

  • UT code for WoS article

    000393219300027

  • EID of the result in the Scopus database

    2-s2.0-85006040078