Preferred location for conducting filament formation in thin-film nano-ionic electrolyte: study of microstructure by atom-probe tomography

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F17%3A39911161" target="_blank" >RIV/00216275:25310/17:39911161 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1007/s10854-017-6383-y" target="_blank" >http://dx.doi.org/10.1007/s10854-017-6383-y</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-017-6383-y" target="_blank" >10.1007/s10854-017-6383-y</a>

Result language

angličtina

Original language name

Preferred location for conducting filament formation in thin-film nano-ionic electrolyte: study of microstructure by atom-probe tomography

Original language description

Atom-probe tomography of Ag-photodoped amorphous thin-film Ge40S60, the material of interest in nano-ionic memory and lateral geometry MEMS technologies, reveals regions with two distinct compositions on a nanometer length-scale. One type of region is Ag-rich and of a size typically extending beyond the measured sample volume of similar to 40 x 40 x 80 nm(3). These type-I regions contain aligned nanocolumns, similar to 5 nm wide, that are the likely location for reversible diffusion of Ag+ ions and associated growth/dissolution of conducting filaments. The nanocolumns become relatively Ag-rich during the photodoping, and the pattern of Ag enrichment originates from the columnar-porous structure of the as-deposited film that is to some extent preserved in the electrolyte after photodoping. Type-II regions have lower Ag content, are typically 10-20 nm across, and appear to conform to the usual description of the photoreaction products of the optically-induced dissolution and diffusion of silver in a thin-film chalcogenide. The microstructure, with two types of region and aligned nanocolumns, is present in the electrolyte after photodoping without any applied bias, and is important for understanding switching mechanisms, and writing and erasing cycles, in programmable-metallization-cell memory.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

20506 - Coating and films

Project

<a href="/en/project/LH14059" target="_blank" >LH14059: Electrochemical metallization cells - nanoscale memories in amorphous chalcogenide films</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Materials Science: Materials in Electronics

ISSN

0957-4522

e-ISSN

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Volume of the periodical

28

Issue of the periodical within the volume

9

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

6

Pages from-to

6846-6851

UT code for WoS article

000399709300062

EID of the result in the Scopus database

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