Investigation of an amphoteric behaviour of arsenic dopant in polycrystalline SnSe
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F18%3A39912715" target="_blank" >RIV/00216275:25310/18:39912715 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Investigation of an amphoteric behaviour of arsenic dopant in polycrystalline SnSe
Original language description
We investigated eventual amphoteric behaviour of As atoms in SnSe by substituting in either cation or anion site. The investigation involved two series of polycrystalline samples of nominal composition Sn(1-x)As(x)Se (0 <= x <= 0.1) and SnAsxSe1-x (0 <= x <= 0.08). The prepared powders were identified by X-ray diffraction. Hot-pressed from powder, polycrystalline pellets were used for characterization of transport and thermoelectric properties in temperature range of 300–730 K. An embedding of the As atoms in either cation or anion site seems to prevent formation of the major defects present in the undoped SnSe, tin vacancies Vsub(Sn2-). Instead, selenium vacancies Vsub(Se2+) together with substitutional defects As(Sn)+ play the major role in the electronic transport in the Sn(1-x)As(x)Se system. Due to rather low solubility of arsenic in the system (x < 0.02), either As inclusions or amorphous As-Se phase is formed in highly doped samples. In the case of SnAs(x)Se(1-x), As atoms enter Se position forming AsSe-, which increases the hole concentration in the doped samples at lower temperatures. At higher temperatures, the properties of the compounds (for x > 0.03) are influenced by the formation of highly conductive AsSn phase. Generally, the substitution of As for both anion and cation lead to no evident enhancement of the thermoelectric figure of merit ZT.
Czech name
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Czech description
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Classification
Type
J<sub>ost</sub> - Miscellaneous article in a specialist periodical
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
<a href="/en/project/GA16-07711S" target="_blank" >GA16-07711S: A systematic study of Schottky barrier height effect on energy filtering of electrons in thermoelectric nanocomposites.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Scientific Papers of the University of Pardubice, Series A, Faculty of Chemical Technology
ISSN
1211-5541
e-ISSN
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Volume of the periodical
24
Issue of the periodical within the volume
November
Country of publishing house
CZ - CZECH REPUBLIC
Number of pages
14
Pages from-to
87-100
UT code for WoS article
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EID of the result in the Scopus database
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