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Investigation of an amphoteric behaviour of arsenic dopant in polycrystalline SnSe

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F18%3A39912715" target="_blank" >RIV/00216275:25310/18:39912715 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Investigation of an amphoteric behaviour of arsenic dopant in polycrystalline SnSe

  • Original language description

    We investigated eventual amphoteric behaviour of As atoms in SnSe by substituting in either cation or anion site. The investigation involved two series of polycrystalline samples of nominal composition Sn(1-x)As(x)Se (0 &lt;= x &lt;= 0.1) and SnAsxSe1-x (0 &lt;= x &lt;= 0.08). The prepared powders were identified by X-ray diffraction. Hot-pressed from powder, polycrystalline pellets were used for characterization of transport and thermoelectric properties in temperature range of 300–730 K. An embedding of the As atoms in either cation or anion site seems to prevent formation of the major defects present in the undoped SnSe, tin vacancies Vsub(Sn2-). Instead, selenium vacancies Vsub(Se2+) together with substitutional defects As(Sn)+ play the major role in the electronic transport in the Sn(1-x)As(x)Se system. Due to rather low solubility of arsenic in the system (x &lt; 0.02), either As inclusions or amorphous As-Se phase is formed in highly doped samples. In the case of SnAs(x)Se(1-x), As atoms enter Se position forming AsSe-, which increases the hole concentration in the doped samples at lower temperatures. At higher temperatures, the properties of the compounds (for x &gt; 0.03) are influenced by the formation of highly conductive AsSn phase. Generally, the substitution of As for both anion and cation lead to no evident enhancement of the thermoelectric figure of merit ZT.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>ost</sub> - Miscellaneous article in a specialist periodical

  • CEP classification

  • OECD FORD branch

    20501 - Materials engineering

Result continuities

  • Project

    <a href="/en/project/GA16-07711S" target="_blank" >GA16-07711S: A systematic study of Schottky barrier height effect on energy filtering of electrons in thermoelectric nanocomposites.</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2018

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Scientific Papers of the University of Pardubice, Series A, Faculty of Chemical Technology

  • ISSN

    1211-5541

  • e-ISSN

  • Volume of the periodical

    24

  • Issue of the periodical within the volume

    November

  • Country of publishing house

    CZ - CZECH REPUBLIC

  • Number of pages

    14

  • Pages from-to

    87-100

  • UT code for WoS article

  • EID of the result in the Scopus database