Vacancies in SnSe single crystals in a near-equilibrium state
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F19%3A39915147" target="_blank" >RIV/00216275:25310/19:39915147 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/19:00519172 RIV/00216208:11320/19:10398925 RIV/00216224:14740/19:00109219
Result on the web
<a href="http://10.1103/PhysRevB.99.035306" target="_blank" >http://10.1103/PhysRevB.99.035306</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.99.035306" target="_blank" >10.1103/PhysRevB.99.035306</a>
Alternative languages
Result language
angličtina
Original language name
Vacancies in SnSe single crystals in a near-equilibrium state
Original language description
The development of intrinsic vacancies in SnSe single crystals was investigated as a function of annealing temperature by means of positron annihilation spectroscopy accompanied by transport measurements. It has been demonstrated that two types of vacancies are present in single-crystalline SnSe. While Sn vacancies dominate in the low-temperature region, Se vacancies and vacancy clusters govern the high-temperature region. These findings are supported by theoretical calculations enabling direct detection and quantification of the most favorable type of vacancies. The experiments show that Sn vacancies couple with one or more Se vacancies with increasing temperature to form vacancy clusters. Interestingly, the clusters survive the α→β transition at ≈800 K and even grow in size with temperature. The concentration of both Se vacancies and vacancy clusters increases with temperature, similar to thermoelectric performance. This indicates that the extraordinary thermoelectric properties of SnSe are related to point defects. We suggest that either these defects vary the band structure in favor of high thermoelectric performance or introduce an energy-dependent scattering of free carriers realizing, in fact, energy filtering of the free carriers. Cluster defects account for the glasslike thermal conductivity of SnSe at elevated temperatures.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review B
ISSN
2469-9950
e-ISSN
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Volume of the periodical
99
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
12
Pages from-to
"035306-1"-"035306-12"
UT code for WoS article
000456031900004
EID of the result in the Scopus database
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