Comparative study of Er3+-doped Ga-Ge-Sb-S thin films fabricated by sputtering and pulsed laser deposition

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F20%3A39916696" target="_blank" >RIV/00216275:25310/20:39916696 - isvavai.cz</a>
Result on the web
<a href="https://www.nature.com/articles/s41598-020-64092-3" target="_blank" >https://www.nature.com/articles/s41598-020-64092-3</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1038/s41598-020-64092-3" target="_blank" >10.1038/s41598-020-64092-3</a>

Result language
angličtina
Original language name
Comparative study of Er3+-doped Ga-Ge-Sb-S thin films fabricated by sputtering and pulsed laser deposition
Original language description
This work reports the fabrication of luminescent quaternary sulfide thin films using radio-frequency sputtering and pulsed laser deposition, and the characterization of their chemical composition, morphology, structure, refractive index and Er3+ photoluminescence. The study of Er3+ 4I13/2 level lifetimes enables developing suitable deposition parameters; the dependency of composition, structural and spectroscopic properties on deposition parameters provides a way to tailor the rare earth-doped thin film properties. The effects of annealing on the sulfide films spectroscopy and lifetimes were assessed.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20506 - Coating and films

Project
<a href="/en/project/GA19-24516S" target="_blank" >GA19-24516S: Chalcogenide films doped with rare-earth ions for gas sensing in the mid-infrared spectral region</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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