Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F21%3A39917533" target="_blank" >RIV/00216275:25310/21:39917533 - isvavai.cz</a>
Result on the web
<a href="https://www.mdpi.com/1996-1944/14/3/578" target="_blank" >https://www.mdpi.com/1996-1944/14/3/578</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/ma14030578" target="_blank" >10.3390/ma14030578</a>
Alternative languages
Result language
angličtina
Original language name
Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film
Original language description
A spectroscopic ellipsometry study on as-deposited and annealed non-stoichiometric indium zinc tin oxide thin films of four different compositions prepared by RF magnetron sputtering was conducted. Multi-sample analysis with two sets of samples sputtered onto glass slides and silicon wafers, together with the analysis of the samples onto each substrate separately, was utilized for as-deposited samples. Annealed samples onto the glass slides were also analyzed. Spectroscopic ellipsometry in a wide spectral range (0.2-6 eV) was used to determine optical constants (refractive index n and extinction coefficient k) of these films. Parameterized semiconductor oscillator function, together with Drude oscillator, was used as a model dielectric function. Geometrical parameters (layer thickness and surface roughness) and physical parameters (direct optical bandgap, free carrier concentration, mobility, and specific electrical resistivity) were determined from spectroscopic ellipsometry data modeling. Specific electrical resistivity determined from the Drude oscillator corresponds well with the results from electrical measurements. Change in the optical bandgap, visible especially for annealed samples, corresponds with the change of free carrier concentration (Moss-Burstein effect). Scanning electron microscope did not reveal any noticeable annealing-induced change in surface morphology.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
<a href="/en/project/LM2018103" target="_blank" >LM2018103: Center of Materials and Nanotechnologies - Research Infrastructure</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials
ISSN
1996-1944
e-ISSN
1996-1944
Volume of the periodical
14
Issue of the periodical within the volume
3
Country of publishing house
CH - SWITZERLAND
Number of pages
14
Pages from-to
578
UT code for WoS article
000615391700001
EID of the result in the Scopus database
2-s2.0-85100242111