Atomic layer deposition and characterization of Bi1Se1 thin films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F23%3A39920350" target="_blank" >RIV/00216275:25310/23:39920350 - isvavai.cz</a>

Result on the web

<a href="https://www.sciencedirect.com/science/article/pii/S0955221923003035" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0955221923003035</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jeurceramsoc.2023.04.026" target="_blank" >10.1016/j.jeurceramsoc.2023.04.026</a>

Result language

angličtina

Original language name

Atomic layer deposition and characterization of Bi1Se1 thin films

Original language description

Van der Waals (vdWs) heterostructured materials have attracted considerable interest due to their intriguing physical properties. Here, we report on the deposition of BiSe by atomic layer deposition (ALD) using Bi(NMe2)3 and Se(SnMe3)2 as volatile and reactive Bi and Se precursors, respectively. The growth rate varies from 1.5 to 2.0 angstrom/cycle in the deposition temperature range of 90-120 degrees C. Higher deposition temperatures lead to increased grain sizes and enhanced crystallinity of resulting films. Further microstructure characterization reveals the formation of crystalline domains with varying orientations and nanotwinned boundaries. The presence of Bi-Bi zigzag bilayers and the formation of the BiSe phase were confirmed by the existence of the Bi-Bi binding energy peak in the XPS spectra and Raman spectra. Furthermore, the electrical conductivity of BiSe ranged from 1420 to 1520 S/cm due to the ultrahigh carrier concentration (2-3.5 x 1021 cm-3), which is the highest among undoped bismuth selenide-based materials.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10401 - Organic chemistry

Project

—

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2023

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of the European Ceramic Society

ISSN

0955-2219

e-ISSN

1873-619X

Volume of the periodical

43

Issue of the periodical within the volume

11

Country of publishing house

GB - UNITED KINGDOM

Number of pages

6

Pages from-to

4808-4813

UT code for WoS article

001004620000001

EID of the result in the Scopus database

2-s2.0-85152640841