The creation of defects in Cu-doped TiO2 memristive devices

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F24%3A39921773" target="_blank" >RIV/00216275:25310/24:39921773 - isvavai.cz</a>
Result on the web
<a href="https://link.springer.com/article/10.1557/s43579-024-00634-4#citeas" target="_blank" >https://link.springer.com/article/10.1557/s43579-024-00634-4#citeas</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1557/s43579-024-00634-4" target="_blank" >10.1557/s43579-024-00634-4</a>

Result language
angličtina
Original language name
The creation of defects in Cu-doped TiO2 memristive devices
Original language description
Memristors are utilized in nonvolatile memory and artificial synaptic devices. However, the industrial application of memristors has been restricted by the occurrence of fatigue, the mechanism of which is still under debate. In this paper, we systematically investigated the mechanism of defect generation created by Joule heating in Cu-doped TiO2 memristive device. The results also demonstrated that the Joule heat for artificial synaptic emulation was less severe than that for digital data storage.
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20500 - Materials engineering

Project
<a href="/en/project/EF17_048%2F0007376" target="_blank" >EF17_048/0007376: High sensitive sensors and low density materials based on polymeric nanocomposites - NANOMAT</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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