Emulating synaptic plasticity with a poly[N-(3-(9H-carbazol-9-yl)propyl)methacrylamide] memristor

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389013%3A_____%2F24%3A00588497" target="_blank" >RIV/61389013:_____/24:00588497 - isvavai.cz</a>

Alternative codes found

RIV/00216208:11320/24:10493907

Result on the web

<a href="https://pubs.rsc.org/en/content/articlelanding/2024/ma/d4ma00399c" target="_blank" >https://pubs.rsc.org/en/content/articlelanding/2024/ma/d4ma00399c</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/D4MA00399C" target="_blank" >10.1039/D4MA00399C</a>

Result language

angličtina

Original language name

Emulating synaptic plasticity with a poly[N-(3-(9H-carbazol-9-yl)propyl)methacrylamide] memristor

Original language description

Synaptic plasticity, denoting the variable strength of communication between adjacent neurons, represents a fundamental property of nervous systems that governs learning/forgetting and information storage in memory. It is shown here that a memristor with a poly [N-(3-(9H-carbazole-9-yl) propyl)methacrylamide] (PCaPMA) active layer, sandwiched between ITO and Au or Al electrodes, can emulate such a function. Its resistance, stimulated by a series of low amplitude voltage pulses, can gradually increase or decrease depending on the polarity, number, and frequency of stimulation pulses. Such behaviour is analogous to the potentiation and depression of neuronal synapses. A variety of synaptic functions, including short- and long-term plasticity, paired-pulse facilitation/depression (PPF/D), spike-timing-dependent plasticity (STDP), and associative learning, have been comprehensively explored on the millisecond timescale and the results suggest the possibility of linking device functions to biological synapse processes. The reported electrical properties have been attributed to a combination of several mechanisms, such as voltage-induced conformation changes, trapping/detrapping of charge carriers at localized sites, and redox phenomena. The results suggest the potential use of this device for applications in artificial intelligence and neuromorphic computing.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10404 - Polymer science

Project

<a href="/en/project/GA24-10384S" target="_blank" >GA24-10384S: Polymer memristor with neurosynaptic properties</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2024

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Materials Advances

ISSN

2633-5409

e-ISSN

2633-5409

Volume of the periodical

5

Issue of the periodical within the volume

16

Country of publishing house

GB - UNITED KINGDOM

Number of pages

11

Pages from-to

6388-6398

UT code for WoS article

001268448200001

EID of the result in the Scopus database

2-s2.0-85198658643