Huge Temperature-Induced Increase in Chemical Resistance of Solution-Processed Amorphous Thin Films along the As3S7-MoS3 Tie-Line and Its Structural Explanation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F25%3A39923135" target="_blank" >RIV/00216275:25310/25:39923135 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1021/acsomega.5c05113" target="_blank" >https://doi.org/10.1021/acsomega.5c05113</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsomega.5c05113" target="_blank" >10.1021/acsomega.5c05113</a>
Alternative languages
Result language
angličtina
Original language name
Huge Temperature-Induced Increase in Chemical Resistance of Solution-Processed Amorphous Thin Films along the As3S7-MoS3 Tie-Line and Its Structural Explanation
Original language description
Amorphous chalcogenide thin films have been widely studied for use in lithography as a photoresist due to significant changes in etching rates caused by photoinduced structural changes upon exposure to light. Here, we report on the role of the transition metal molybdenum contained in MoS3 on the significantly enhanced thermal stability and chemical resistance of As3S7-MoS3 thin films deposited by a sol-gel method. We demonstrate that the dependences of etching rates of As3S7-MoS3 thin films in a solution consisting of 1 vol % n-butylamine in dimethyl sulfoxide on the annealing temperature exhibit two linear regimes with a sudden change of their slopes at 160 degrees C. The first regime, below 160 degrees C, is characterized by a significantly lower chemical resistance of As3S7-MoS3 thin films in comparison with As3S7 thin films, while the second regime manifests a gradual decrease in etching rates by 4 orders of magnitude in a range of annealing temperatures from 160 to 200 degrees C. We explain both trends using optical properties, differential scanning calorimetry, and attenuated total reflection results. We propose that the vast, 4-orders-of-magnitude difference in the etching rate between as-deposited As3S7-MoS3 and annealed thin films at 200 degrees C can be successfully applied as a resist layer in wet lithography.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20500 - Materials engineering
Result continuities
Project
—
Continuities
—
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Omega
ISSN
2470-1343
e-ISSN
2470-1343
Volume of the periodical
10
Issue of the periodical within the volume
40
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
"46928–46934"
UT code for WoS article
001587033500001
EID of the result in the Scopus database
2-s2.0-105018600992