Modification of AZO thin-film properties by annealing and ion etching

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F10%3A00503188" target="_blank" >RIV/49777513:23640/10:00503188 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Modification of AZO thin-film properties by annealing and ion etching

Original language description

Effects of annealing and ion etching on the structural, electrical and optical properties of sputtered ZnO:Al (AZO) thin films were investigated. The post-deposition annealing at temperatures TA = 200?400 °C in the forming gas (80% N2/20% H2) for 1 h andion RF-sputter etching after annealing were used. Ion-sputter etching rate was 7 nm/min. The surface topography changed noticeably after ion-sputter etching: the surface of the sample was rougher (Ra = 33 nm) in comparison with annealed sample only (Ra= 9 nm). After the post-deposition annealing temperature TA = 400 °C and ion-sputter etching thin films have higher integral transmittance (in the range of ? = 400?1000 nm) than non-etched samples. The figure of merit (F) became higher with increase of annealing temperature and the maximum value was F = 8%/? at TA = 400 °C (Rs = 10 ?, Tint = 86%).

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Vacuum

ISSN

0042-207X

e-ISSN

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Volume of the periodical

84

Issue of the periodical within the volume

1

Country of publishing house

GB - UNITED KINGDOM

Number of pages

3

Pages from-to

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UT code for WoS article

000270625900054

EID of the result in the Scopus database

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