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Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43915286" target="_blank" >RIV/49777513:23640/12:43915286 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1051/epjpv/2012006" target="_blank" >http://dx.doi.org/10.1051/epjpv/2012006</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1051/epjpv/2012006" target="_blank" >10.1051/epjpv/2012006</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films

  • Original language description

    Thin films of gallium-doped zinc oxide (ZnO:Ga) were deposited on Corning glass substrates by rf diode sputtering and then implanted with 180 keV nitrogen ions in the dose range of 1x10^15 -2x10^16 cm?2. After the ion implantation, the films were annealed under oxygen and nitrogen ambient, at different temperatures and time, and the effect on their microstructure, type and range of conductivity, and optical properties was investigated. Post-implantation annealing at 550°C resulted in n-type conductivityfilms with the highest electron concentration of 1.4x10^20 cm?3. It was found that the annealing parameters had a profound impact on the film's properties. A p-type conductivity (a hole concentration of 2.8x10^19 cm?3, mobility of 0.6 cm2/(V s) was observed in a sample implanted with 1 x 10^16 cm?2 after a rapid thermal annealing (RTA) in N2 at 400°C. Optical transmittance of all films was }84% in the wavelength range of 390-1100 nm. The SIMS depth profile of the complex 30NO? ions repr

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů