Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43915286" target="_blank" >RIV/49777513:23640/12:43915286 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1051/epjpv/2012006" target="_blank" >http://dx.doi.org/10.1051/epjpv/2012006</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1051/epjpv/2012006" target="_blank" >10.1051/epjpv/2012006</a>
Alternative languages
Result language
angličtina
Original language name
Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films
Original language description
Thin films of gallium-doped zinc oxide (ZnO:Ga) were deposited on Corning glass substrates by rf diode sputtering and then implanted with 180 keV nitrogen ions in the dose range of 1x10^15 -2x10^16 cm?2. After the ion implantation, the films were annealed under oxygen and nitrogen ambient, at different temperatures and time, and the effect on their microstructure, type and range of conductivity, and optical properties was investigated. Post-implantation annealing at 550°C resulted in n-type conductivityfilms with the highest electron concentration of 1.4x10^20 cm?3. It was found that the annealing parameters had a profound impact on the film's properties. A p-type conductivity (a hole concentration of 2.8x10^19 cm?3, mobility of 0.6 cm2/(V s) was observed in a sample implanted with 1 x 10^16 cm?2 after a rapid thermal annealing (RTA) in N2 at 400°C. Optical transmittance of all films was }84% in the wavelength range of 390-1100 nm. The SIMS depth profile of the complex 30NO? ions repr
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů