Acceptor Doping in Sputtered ZnO Thin Films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43921791" target="_blank" >RIV/49777513:23640/12:43921791 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1757-899X/34/1/012008" target="_blank" >http://dx.doi.org/10.1088/1757-899X/34/1/012008</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1757-899X/34/1/012008" target="_blank" >10.1088/1757-899X/34/1/012008</a>
Alternative languages
Result language
angličtina
Original language name
Acceptor Doping in Sputtered ZnO Thin Films
Original language description
Acceptor doping of zinc oxide thin films prepared by radio-frequency diode sputtering, using nitrogen as a doping source, was realized during sputtering in Ar/N 2 gas mixture or via ion implantation of 180 keV N ions. Effects of N doping and (Al,Ga):N co-doping on the films' properties have been studied. Highly resistive ZnO:N films with p-type carrier concentrations ranging 10 14-10 15 cm -3 and more random orientation of the crystallites were obtained. The co-doped ZnO:Al:N and ZnO:Ga:N films maintained a c-axis texture in the direction of the surface normal. The carrier concentration of the p-type films was on the order of 10 17- 10 18 cm -3. 180 keV N ions were implanted in sputtered ZnO:Ga thin films. The implant doses varied 10 15-2x 10 16 cm -2.Annealing studies were performed under O 2 and N 2 ambient at different temperatures and times. N-implanted films were polycrystalline with a preferred c-axis orientation of the crystallites.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JJ - Other materials
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
IOP Conference Series: Materials Science and Engineering
ISBN
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ISSN
1757-8981
e-ISSN
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Number of pages
8
Pages from-to
1-8
Publisher name
IOP Publishing LTD
Place of publication
Bristol
Event location
Varšava, Polsko
Event date
Sep 19, 2011
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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