Preparation of p-type ZnO thin films by RF diode sputtering

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F06%3A00503256" target="_blank" >RIV/49777513:23640/06:00503256 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Preparation of p-type ZnO thin films by RF diode sputtering
Original language description
A p-type ZnO thin films were prepared by RF diode sputtering and nitrogen doping. Deposition in plasma N-2 gas source increases the N solubility and thus the incorporation of No acceptor that is responsible for p-type conductivity of the ZnO films. Ramananalyses performed in back scattering configuration proved the incorporation of the nitrogen acceptor No into ZnO:N. Raman spectra show E-2 mode and two nitrogen related local vibrational modes (LVMs) typical for N-doped ZnO. Minimum resistivity of 790Omega cm, a Hall mobility of 22 cm 2 V-1.s(-1) and the carrier concentration of 3.6 x 10(14) cm(-3) were obtained at 75 % N-2 in Ar/N-2 sputtering gas. X-ray diffraction measurements (XRD) showed that ZnO:N films had the preferential orientation of (002)plane at 25 % N-2 and of (100) plane for higher N-2 concentrations. The average grain size was ftom 7 to 42 nm for all Ar/N-2 ratios. ZnO:N films exhibit relatively high microstrains (10 x 10(-3)).
Czech name
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Czech description
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Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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