Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43916042" target="_blank" >RIV/49777513:23640/12:43916042 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1149/2.003206jss" target="_blank" >http://dx.doi.org/10.1149/2.003206jss</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1149/2.003206jss" target="_blank" >10.1149/2.003206jss</a>
Alternative languages
Result language
angličtina
Original language name
Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation
Original language description
The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin ?lms prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10^15 and 1 x 10^16 cm?2 to achieve a p-type semiconductor. An implantation of 1 x 10^15 cm?2 N+-ions yielded a p-type with hole concentrations 10^17-10^18 cm-3 in some as-implanted samples. The ?lms annealed at temperatures above 200?C in O2 and above 400?C in N2 were n-type with electron concentrations 10^17-10^20 cm? 3. The higher nitrogen concentration (con?rmed by SRIM and SIMS), in the ?lms implanted with a 1 x 10^16cm-2 dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors bynitrogen acceptors.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů