P-Type conduction in Sputtered ZnO Thin films Doped by Nitrogen

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F06%3A00503262" target="_blank" >RIV/49777513:23640/06:00503262 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
P-Type conduction in Sputtered ZnO Thin films Doped by Nitrogen
Original language description
Nitrogen doped zinc oxide (ZnO:N) thin films were prepared by RF diode sputtering from ZnO target in different ratio of Ar/N2 gas mixture. The p-type features of ZnO:N thin films have been caused by the incorporation of the nitrogen acceptor N0 into ZnOwhat was proven by Second Ion Mass Spectroscopy (SIMS) analysis. The minimum value of resistivity of 790 Omega cm, a Hall mobility of 22 cm(2)V(-1) s(-1) and the carrier concentration of 3.6 x 10(14) cm(-3) were yielded at 75%N-2. X-ray diffraction measurements (XRD) showed that ZnO:N films had the preferential orientation of (002) plane at 25% N-2 and of (100) plane for higher N2 concentrations. The average grain size was from 7 to 42 nm for all Ar/N-2 ratios. ZnO:N films exhibit relatively high microstrains (10 x 10(-3)).
Czech name
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Czech description
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Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of 25th International Conference on Microelectronics
ISBN
1-4244-0117-8
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Serbia and Montenegro IEEE Section - ED/SSc Chapter
Place of publication
Belgrade
Event location
Belgrade
Event date
May 14, 2006
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000238839700068

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