Influence of Doping and Co-doping on the Behavior of Sputtered ZnO Thin Films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F11%3A43921796" target="_blank" >RIV/49777513:23640/11:43921796 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1149/1.3570855" target="_blank" >http://dx.doi.org/10.1149/1.3570855</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1149/1.3570855" target="_blank" >10.1149/1.3570855</a>

Result language
angličtina
Original language name
Influence of Doping and Co-doping on the Behavior of Sputtered ZnO Thin Films
Original language description
A co-dopand approach was used to investigate influence of gallium-nitrogen co-doping on the microstructure and electrical parameters of ZnO. ZnO:Ga:N thin films were deposited by rf diode sputtering at varying nitrogen content (0 - 100%) in Ar/N2 gas. ZnO:Ga films (0% N2) showed minimum resistivity of 0.12 ohm*cm, electron concentration of 2.5e19 cm-3 and mobility of 2cm2/Vs. A hole concentration of 2.6e18 cm-3, a mobility of 2cm2/Vs and resistivity of 1.5 ohm*cm in ZnO:Ga:N resulted from the depositionwith 100% N2 in Ar/N2 gas.
Czech name
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Czech description
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Project
<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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