Influence of Argon Deposition Pressure on the Mid-Infrared Luminescence of Dysprosium-Doped Ga-Ge-Sb-Se Waveguides Deposited on Different Substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F25%3A39923224" target="_blank" >RIV/00216275:25310/25:39923224 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1021/acsaom.5c00306" target="_blank" >https://doi.org/10.1021/acsaom.5c00306</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsaom.5c00306" target="_blank" >10.1021/acsaom.5c00306</a>
Alternative languages
Result language
angličtina
Original language name
Influence of Argon Deposition Pressure on the Mid-Infrared Luminescence of Dysprosium-Doped Ga-Ge-Sb-Se Waveguides Deposited on Different Substrates
Original language description
Radiofrequency (RF) magnetron sputtering is used to deposit 5000 ppmw Dy3+-doped selenide thin films on SiO2 or undoped sulfide confinement layers on silicon substrates. Then, photolithography and dry etching techniques are implemented to fabricate rare-earth-doped selenide ridge waveguides. The investigation was focused on the influence of argon deposition pressure on amorphous chalcogenide thin films' properties with special attention to luminescence. Fluorescence in short-wave and midwave infrared spectral ranges is recorded using optical excitation at 1.32 mu m. The argon pressure of 1 x 10-2 mbar gives the highest and clearest signal in the midwave infrared region. At 4.38 mu m, single-mode optical propagation is efficiently observed in 5000 ppmw Dy3+-doped Ga5Ge20Sb10Se65 waveguides deposited on an undoped sulfide confinement layer on the silicon substrate.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20500 - Materials engineering
Result continuities
Project
<a href="/en/project/GA22-05179S" target="_blank" >GA22-05179S: Infrared photonics for chemical sensors: Materials strategy based on amorphous chalcogenides</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Applied Optical Materials
ISSN
2771-9855
e-ISSN
2771-9855
Volume of the periodical
3
Issue of the periodical within the volume
11
Country of publishing house
US - UNITED STATES
Number of pages
11
Pages from-to
2555-2565
UT code for WoS article
001605923400001
EID of the result in the Scopus database
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